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ESD TR5.4-03
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ESD Association Technical Report For Electrostatic Discharge Sensitivity Testing – Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits, Transient Latch-up Testing – Component Level, Supply Transient Stimulation
Published by | Publication Date | Number of Pages |
ESD | 2011 | 36 |
ESD TR5.4-03 – ESD Association Technical Report For Electrostatic Discharge Sensitivity Testing – Latch-Up Sensitivity Testing of CMOS/BiCMOS Integrated Circuits, Transient Latch-up Testing – Component Level, Supply Transient Stimulation
The information and procedures defined in this technical report may be used to search for latch-up sensitive layouts within integrated circuits. The stress levels and stimuli parameter values defined may be used for a wide range of devices. Levels and values can be scaled up or down to suit the requirements of the actual device under test and types of transient stimuli being used.
Product Details
- Published:
- 2011
- ANSI:
- ANSI Approved
- Number of Pages:
- 36
- File Size:
- 1 file , 230 KB
- Note:
- This product is unavailable in Russia, Ukraine, Belarus