IEC 62373-1 Ed. 1.0 b

IEC 62373-1 Ed. 1.0 b – Semiconductor devices – Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) – Part 1: Fast BTI test for MOSFET

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.

Product Details

Edition:

1.0

Published:

07/15/2020

Number of Pages:

44

File Size:

1 file , 1.7 MB

Note:

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