IEC 63284 Ed. 1.0 b – Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
Product Details
Edition:
1.0
Published:
04/01/2022
ISBN(s):
9782832211016
Number of Pages:
30
File Size:
1 file , 970 KB
Note:
This product is unavailable in Ukraine, Russia, Belarus
